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BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
Rev. 01 -- 3 July 2007 Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance Tcase = 25 C in a common source class-AB test circuit. Mode of operation 2-carrier W-CDMA[1]
[1]
f (MHz) f1 = 2135; f2 = 2145
VDS (V) 28
PL(AV) (W) 33
Gp (dB) 13.5
D (%) 26
IMD3 (dBc) -37
ACPR (dBc) -41
10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 - 64 DPCH.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and an IDq of 1150 mA: N Average output power = 33 W N Power gain = 13.8 dB N Efficiency = 26 % N ACPR = -41 dBc N IMD3 = -37 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness (> 10 : 1 VSWR at 130 W (CW)) I High efficiency I High peak power capability (> 190 W) I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range.
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Symbol
BLF4G22-130 (SOT502A)
1 3 2 2 3
sym112
1
BLF4G22LS-130 (SOT502B) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3. Ordering information Package Name BLF4G22-130 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads Version SOT502A SOT502B Type number
BLF4G22LS-130 -
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +15 15 +150 200 Unit V V A C C
BLF4G22-130_4G22LS-130_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 3 July 2007
2 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
5. Thermal characteristics
Table 5: Symbol Rth(j-case) Thermal characteristics Parameter Conditions Type BLF4G22-130 BLF4G22LS-130 Typ 0.56 0.50 Max 0.65 0.59 Unit K/W K/W thermal resistance from Tcase = 80 C; junction to case PL = 33 W
6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specified Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 2.1 mA VDS = 10 V; ID = 230 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 6 V; VDS = 10 V VGS = +15 V; VDS = 0 V VDS = 10 V; ID = 12.8 A VGS = VGS(th) + 6 V; ID = 7.7 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 2.5 35 Typ 3.1 44 11 0.07 3.4 Max Unit 3.5 5 420 V V A A nA S pF
7. Application information
Table 7. Application information Mode of operation: 2-carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1-64 DPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz. Symbol Parameter Gp RLin D IMD3 ACPR power gain input return loss drain efficiency third order intermodulation distortion adjacent channel power ratio Conditions PL(AV) = 33 W PL(AV) = 33 W PL(AV) = 33 W PL(AV) = 33 W PL(AV) = 33 W Min 12.5 -9 24 Typ 13.5 -15 26 -37 -41 Max Unit -34 -39 dB dB % dBc dBc
7.1 Ruggedness in class-AB operation
The BLF4G22-130 and the BLF4G22LS-130 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1150 mA; PL = 130 W (CW).
BLF4G22-130_4G22LS-130_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 3 July 2007
3 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
40 Gp (dB) 30 D 20 Gp
001aag620
40 D (%) 30
-15 IMD3 ACPR (dBc) -25
001aag621
20
-35
IMD3
ACPR 10 10 -45
0 0 10 20 30 40 50 PL(AV) (W)
0
-55 0 10 20 30 40 50 PL(AV) (W)
VDS = 28 V; IDq = 900 mA; Tcase = 25 C; f = 1990 MHz.
VDS = 28 V; IDq = 900 mA; Tcase = 25 C; f = 1990 MHz.
Fig 1. 2-Carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values
Fig 2. 2-Carrier W-CDMA IMD3 and ACPR as functions of average load power; typical values
Table 8. Typical impedance VDS = 28 V; IDq = 1150 mA; PL(AV) = 33 W; Tcase = 25 C. f MHz 2110 2140 2170 ZS 1.9 - j2.8 1.8 - j2.7 1.7 - j2.6 ZL 1.7 - j1.8 1.6 - j1.6 1.5 - j1.4
BLF4G22-130_4G22LS-130_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 3 July 2007
4 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
16 Gp (dB) 14
(5) (4) (3) (2) (1)
001aag622
-20 IMD3 (dBc) -30
(5)
001aag623
-40
(4) (3) (2)
-50 12 -60
(1)
10 1 10
102 PL(PEP) (W)
103
-70 1 10
102 PL(PEP) (W)
103
(1) IDq = 850 mA (2) IDq = 975 mA (3) IDq = 1150 mA (4) IDq = 1350 mA (5) IDq = 1550 mA VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz.
(1) IDq = 850 mA (2) IDq = 975 mA (3) IDq = 1150 mA (4) IDq = 1350 mA (5) IDq = 1550 mA VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz.
Fig 3. Two-tone power gain as a function of peak envelope load power; typical values
Fig 4. Third order intermodulation distortion as a function of peak envelope load power; typical values
1011 t50% x IDS2 (h x A2) 1010
001aag625
15 Gp (dB)
(1)
001aag624
13
(2)
109
108 11 107
9 0 80 160 PL (W) 240
106 80 120 160 200 Tj (C) 240
ton = 8 s; toff = 1 ms. (1) PL(1dB) = 174 W (= 52.4 dBm) (2) PL(3db) = 209 W (= 53.2 dBm)
Fig 5. Pulsed peak power capability; typical values
Fig 6. Time in hours to 50 % cumulative failure (t50%) due to electromigration as function of junction temperature
BLF4G22-130_4G22LS-130_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 3 July 2007
5 of 13
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Product data sheet Rev. 01 -- 3 July 2007
(c) NXP B.V. 2007. All rights reserved. BLF4G22-130_4G22LS-130_1
8. Test information
NXP Semiconductors
C1 C12 C13
VGG
R1
VDD
C11 C2
C14 C3 C4 L7 L14 C5 C6 C8 C9 C10 C15
BLF4G22-130; BLF4G22LS-130
L6
DUT
C7 L1 L2 L3 L4 L5 L8 L10 C16 L11 L12 L13
L9
UHF power LDMOS transistor
001aac275
See Table 9 for list of components.
Fig 7. Schematic test circuit for operation at 2.14 GHz
6 of 13
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Product data sheet Rev. 01 -- 3 July 2007
(c) NXP B.V. 2007. All rights reserved. BLF4G22-130_4G22LS-130_1
NXP Semiconductors
50 mm C1 C13
VGG
R1
C12
C11 C2
C3 C5 75 mm
C4
L7 L14 C8 C9 C10 C6
C14 C15
BLF4G22-130; BLF4G22LS-130
L6
C7 L1 L2 L3 L4 L5 L8 L9 L10
C16 L11
L12
L13
UHF power LDMOS transistor
001aac276
The components are situated on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (r = 3.5); thickness = 0.76 mm. The other side is unetched and serves as a ground plane. See Table 9 for list of components.
Fig 8. Component layout for 2.14 GHz test circuit
7 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
Table 9.
List of components (see Figure 7 and Figure 8) Description tantalum capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor tantalum capacitor multilayer ceramic chip capacitor stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline SMD resistor Value 10 F; 35 V 4.7 F; 25 V 8.2 pF 1.5 F; 50 V 0.6 pF 4.7 pF 220 nF; 50 V 220 F; 63 V 4.7 F; 50 V 7.5 pF Z0 = 50 Z0 = 50 Z0 = 24 Z0 = 15 Z0 = 9.5 Z0 = 60 Z0 = 60 Z0 = 8.2 Z0 = 5.5 Z0 = 50 Z0 = 50 Z0 = 34 Z0 = 50 Z0 = 43 4.7 ; 0.1 W
[1] [3] [3] [3] [3] [3] [3] [3] [3] [3] [3] [3] [3] [3] [3] [1] [2] [2]
Component C1, C2, C11 C3 C4, C10 C5, C8, C14, C15 C6 C7 C9 C12 C13 C16 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12 L13 L14 R1
[1] [2] [3]
Remarks
ATC180R (W x L) 32.3 mm x 1.7 mm (W x L) 2.2 mm x 1.7 mm (W x L) 2.3 mm x 4.8 mm (W x L) 2.4 mm x 8 mm (W x L) 9.3 mm x 14 mm (W x L) 4 mm x 1.2 mm (W x L) 14.5 mm x 1.2 mm (W x L) 9.3 mm x 16.8 mm (W x L) 3 mm x 25.8 mm (W x L) 11 mm x 1.7 mm (W x L) 9.5 mm x 1.7 mm (W x L) 3 mm x 3 mm (W x L) 12.7 mm x 1.7 mm (W x L) 13.5 mm x 2.1 mm
American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality. Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (r = 3.5); thickness = 0.76 mm.
BLF4G22-130_4G22LS-130_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 3 July 2007
8 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 9. Package outline SOT502A
BLF4G22-130_4G22LS-130_1 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 3 July 2007
9 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 03-01-10 07-05-09
Fig 10. Package outline SOT502B
BLF4G22-130_4G22LS-130_1 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 3 July 2007
10 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
10. Abbreviations
Table 10. Acronym 3GPP ACPR CCDF CW DPCH EDGE EVM GSM LDMOS LDMOST PAR RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Adjacent Channel Power Ratio Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Error Vector Magnitude Global System for Mobile communications Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access
11. Revision history
Table 11. Revision history Release date 20070703 Data sheet status Product data sheet Change notice Supersedes Document ID BLF4G22-130_4G22LS-130_1
BLF4G22-130_4G22LS-130_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 3 July 2007
11 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BLF4G22-130_4G22LS-130_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 3 July 2007
12 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 July 2007 Document identifier: BLF4G22-130_4G22LS-130_1

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